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| SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC D N N A KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF12N60P O C F E G B Q I K M L J H P MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KF12N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 215 1.72 150 -55 150 D N N H UNIT KF12N60F 600 30 12 7.4 33 450 17 4.5 49.8 0.4 12* 7.4* 33* mJ mJ B 1 2 3 DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q V V 1. GATE 2. DRAIN 3. SOURCE TO-220AB A KF12N60F A F C O E DIM MILLIMETERS V/ns W W/ K Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient L M J R RthJC RthJA 0.58 62.5 2.51 62.5 /W /W 1 2 3 Q A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 _ 13.0 + 0.5 _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G * : Drain current limited by maximum junction temperature. 1. GATE 2. DRAIN 3. SOURCE EQUIVALENT CIRCUIT D TO-220IS (1) G S 2008. 10. 29 Revision No : 2 1/7 KF12N60P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=6A 600 2.0 0.63 0.51 10 4.0 100 0.6 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. Marking 1 1 KF12N60 801 P KF12N60 801 F 2 2 1 2 PRODUCT NAME LOT NO 2008. 10. 29 Revision No : 2 2/7 KF12N60P/F Fig1. ID - VDS 100 VGS=10V VDS=20V Fig2. ID - VGS Drain Current ID (A) 10 VGS=6V VGS=5V Drain Current ID (A) 10 1 10 0 100 C 25 C 1 0.1 0.1 1 10 100 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250 Fig4. RDS(ON) - ID 1.2 1.1 On - Resistance RDS(ON) () 1.0 1.0 VGS=6V 0.6 VGS=10V 0.9 0.8 -100 -50 0 50 100 150 0.2 0 5 10 15 20 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 10 2 Fig6. RDS(ON) - Tj 3.0 VGS =10V IDS = 6A Reverse Drain Current IS (A) 100 C 25 C 10 1 Normalized On Resistance 2.5 2.0 1.5 1.0 0.5 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 1.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2008. 10. 29 Revision No : 2 3/7 KF12N60P/F Fig 7. C - VDS 104 12 ID=12A Fig8. Qg- VGS Gate - Source Voltage VGS (V) VDS = 480V VDS = 300V VDS = 120V 10 8 6 4 2 0 0 5 10 Capacitance (pF) Ciss 103 Coss 102 Crss 101 0 10 20 30 40 15 20 25 30 35 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Fig10. Safe Operation Area 102 (KF12N60P) 100s (KF12N60F) 10s Drain Current ID (A) 101 Drain Current ID (A) 100s 1ms 10ms 101 1ms 10ms 100 100ms Operation in this area is limited by RDS(ON) 100 DC Operation in this area is limited by RDS(ON) 100ms 10-1 Tc= 25 C Tj = 150 C Single pulse 10-1 Tc= 25 C Tj = 150 C Single pulse DC 102 100 101 102 103 102 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 14 12 Drain Current ID (A) 10 8 6 4 2 0 25 50 125 150 75 100 Junction Temperature Tj ( C) 2008. 10. 29 Revision No : 2 4/7 KF12N60P/F Fig12. Transient Thermal Response Curve (KF12N60P) 100 Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 10-2 - Rth(j-c) = 0.58 C/W Max. - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve (KF12N60F) Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 10-1 0.05 PDM t1 t2 0.02 0.01 10-2 10-5 Single Pulse - Rth(j-c) = 0.51 C/W Max. - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-4 TIME (sec) 2008. 10. 29 Revision No : 2 5/7 KF12N60P/F Fig14. Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS Fig15. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(on) ton tr td(off) tf toff 2008. 10. 29 Revision No : 2 6/7 KF12N60P/F Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2008. 10. 29 Revision No : 2 7/7 |
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